Exciton-induced lattice defect formation

dc.contributor.author	Savchenko, E.V.
dc.contributor.author	Ogurtsov, A.N.
dc.contributor.author	Zimmerer, G.
dc.date.accessioned	2018-01-14T09:17:33Z
dc.date.available	2018-01-14T09:17:33Z
dc.date.issued	2003
dc.identifier.citation	Exciton-induced lattice defect formation / E.V. Savchenko, A.N. Ogurtsov, G. Zimmerer // Физика низких температур. — 2003. — Т. 29, № 3. — С. 356-360. — Бібліогр.: 26 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 61.82.Ms, 71.35.-y, 78.55.Hx
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/128823
dc.description.abstract	The lattice defect formation in solid Ne induced by electronic excitation was studied using the selective vacuum ultraviolet spectroscopy method. The samples were excited with synchrotron radiation in the range of excitonic absorption n = 2Г(3/2). The dose dependence of the intensity distribution in the band of atomic type self-trapped exciton luminescence was analyzed. A direct evidence of the formation and accumulation of point lattice defects in solid Ne via the excitonic mechanism was obtained for the first time. The model of the permanent lattice defect formation is discussed.	uk_UA
dc.description.sponsorship	It is a pleasure to thank Prof. A.K. Song for fruitful discussions. The authors (E.S. and A.O.) gratefully acknowledge the support by DFG.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Electronically Induced Phenomena: Low Temperature Aspects	uk_UA
dc.title	Exciton-induced lattice defect formation	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA