Low temperature electron transport on semiconductor surfaces

dc.contributor.author	Lastapis, M.
dc.contributor.author	Riedel, D.
dc.contributor.author	Mayne, A.
dc.contributor.author	Bobrov, K.
dc.contributor.author	Dujardin, G.
dc.date.accessioned	2018-01-14T09:03:18Z
dc.date.available	2018-01-14T09:03:18Z
dc.date.issued	2003
dc.identifier.citation	Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 72.20.Jv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/128815
dc.description.abstract	The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K.	uk_UA
dc.description.sponsorship	We wish to thank the European IST-FET «Bottom-up-Nanomachines» (BUN) and the European «Atomic and Molecular Manipulation; a new tool In Science and Technology» (AMMIST) network.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Electronically Induced Phenomena: Low Temperature Aspects	uk_UA
dc.title	Low temperature electron transport on semiconductor surfaces	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA