Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

dc.contributor.author	Charikova, T.
dc.contributor.author	Okulov, V.
dc.contributor.author	Gubkin, A.
dc.contributor.author	Lugovikh, A.
dc.contributor.author	Moiseev, K.
dc.contributor.author	Nevedomsky, V.
dc.contributor.author	Kudriavtsev, Yu.
dc.contributor.author	Gallardo, S.
dc.contributor.author	Lopez, M.
dc.date.accessioned	2017-06-26T05:11:20Z
dc.date.available	2017-06-26T05:11:20Z
dc.date.issued	2015
dc.identifier.citation	Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 72.80.Ey, 75.50.Pp
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/122039
dc.description.abstract	The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.	uk_UA
dc.description.sponsorship	This work was done within RAS Program (project No. 12-P-2-1018) with partial support of RFBR (grant No. 15-02-08909). Authors from Cinvestav thank to SENER and CONACYT, both from Mexico for a financial support of this study, grant No. 152244.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	XX Уральская международная зимняя школа по физике полупроводников	uk_UA
dc.title	Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA