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dc.contributor.author Markevich, I.V.
dc.contributor.author Stara, T.R.
dc.contributor.author Bondarenko, V.O.
dc.date.accessioned 2017-06-18T10:33:23Z
dc.date.available 2017-06-18T10:33:23Z
dc.date.issued 2015
dc.identifier.citation About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other DOI: 10.15407/spqeo18.02.134
dc.identifier.other PACS 81.05.Dz, 81.05.Je
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121804
dc.description.abstract Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies. uk_UA
dc.description.sponsorship This research has been financially supported by National Academy of Sciences of Ukraine (project III-4-11). uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title About self-activated orange emission in ZnO uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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