About self-activated orange emission in ZnO

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 2
→
Переглянути статтю

dc.contributor.author	Markevich, I.V.
dc.contributor.author	Stara, T.R.
dc.contributor.author	Bondarenko, V.O.
dc.date.accessioned	2017-06-18T10:33:23Z
dc.date.available	2017-06-18T10:33:23Z
dc.date.issued	2015
dc.identifier.citation	About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 134-137. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.02.134
dc.identifier.other	PACS 81.05.Dz, 81.05.Je
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121804
dc.description.abstract	Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies.	uk_UA
dc.description.sponsorship	This research has been financially supported by National Academy of Sciences of Ukraine (project III-4-11).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	About self-activated orange emission in ZnO	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA