Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
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Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 4
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dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Vakhnyak, N.D.
dc.contributor.author	Kinzerska, O.V.
dc.contributor.author	Senko, I.M.
dc.date.accessioned	2017-06-15T09:19:02Z
dc.date.available	2017-06-15T09:19:02Z
dc.date.issued	2016
dc.identifier.citation	Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals / V.P. Makhniy, N.D. Vakhnyak, O.V. Kinzerska, I.M. Senko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 391-394. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo19.04.394
dc.identifier.other	PACS 78.55.Et, 78.60.Lc
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121680
dc.description.abstract	The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor phase of ZnSe〈Al〉 substrates causes “quenching” the yellow-green band and appearance of intensive blue luminescent band that has exciton nature.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA