Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

dc.contributor.author	Rogozin, I.V.
dc.date.accessioned	2017-06-15T03:12:09Z
dc.date.available	2017-06-15T03:12:09Z
dc.date.issued	2006
dc.identifier.citation	Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.10.Nz, 61.72.Ji, 68.37.Ps, 78.30.Fs, 78.55.Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121623
dc.description.abstract	Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA