Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 3
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dc.contributor.author	Babentsov, V.N.
dc.date.accessioned	2017-06-15T02:55:59Z
dc.date.available	2017-06-15T02:55:59Z
dc.date.issued	2006
dc.identifier.citation	Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.55.-I, 73.22.-f
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121609
dc.description.abstract	The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA