New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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dc.contributor.author	Arsentyev, I.N.
dc.contributor.author	Bobyl, A.V.
dc.contributor.author	Tarasov, I.S.
dc.contributor.author	Shishkov, M.V.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Ivanov, V.N.
dc.contributor.author	Kamalov, A.B.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Lytvyn, O.S.
dc.contributor.author	Lytvyn, P.M.
dc.contributor.author	Markovskiy, E.P.
dc.contributor.author	Milenin, V.V.
dc.date.accessioned	2017-06-14T16:57:19Z
dc.date.available	2017-06-14T16:57:19Z
dc.date.issued	2005
dc.identifier.citation	New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.05.Rm
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121574
dc.description.abstract	A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates.	uk_UA
dc.description.sponsorship	The work was made in the framework of the Russia−Ukraine Program on Nanophysics and Nanoelectronics.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA