Polymorphism in chalcogenides of alkalineearth metals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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dc.contributor.author	Drozdov, V.А.
dc.contributor.author	Pozhivatenko, V.V.
dc.contributor.author	Drozdov, М.А.
dc.contributor.author	Kovalchuk, V.V.
dc.contributor.author	Moiseev, L.M.
dc.contributor.author	Moiseeva, V.O.
dc.date.accessioned	2017-06-14T16:56:20Z
dc.date.available	2017-06-14T16:56:20Z
dc.date.issued	2005
dc.identifier.citation	Polymorphism in chalcogenides of alkalineearth metals / V.А. Drozdov, V.V. Pozhivatenko, М.А. Drozdov, V.V. Kovalchuk, L.M. Moiseev, V.O. Moiseeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 115-117. — Бібліогр.: 18 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.15.Mb
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121573
dc.description.abstract	Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was the constructive amendments of the potential by means of the electronic density received in a self-coordinated calculation using the approximation of the local density.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Polymorphism in chalcogenides of alkalineearth metals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA