Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method

dc.contributor.author	Gorbatyuk, I.N.
dc.contributor.author	Zhikharevich, V.V.
dc.contributor.author	Ostapov, S.E.
dc.date.accessioned	2017-06-14T16:15:27Z
dc.date.available	2017-06-14T16:15:27Z
dc.date.issued	2005
dc.identifier.citation	Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method / I.N. Gorbatyuk, V.V. Zhikharevich, S.E. Ostapov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 22-25. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 74.62.Bf
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121548
dc.description.abstract	This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg₁₋x₋y₋zAxByCzTe under conditions of a modified zone melting.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA