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Analysis of the silicon solar cells efficiency. Type of doping and level optimization

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dc.contributor.author Sachenko, A.V.
dc.contributor.author Kostylyov, V.P.
dc.contributor.author Gerasymenko, M.V.
dc.contributor.author Korkishko, R.M.
dc.contributor.author Kulish, M.R.
dc.contributor.author Slipchenko, M.I.
dc.contributor.author Sokolovskyi, I.O.
dc.contributor.author Chernenko, V.V.
dc.date.accessioned 2017-06-14T15:20:04Z
dc.date.available 2017-06-14T15:20:04Z
dc.date.issued 2016
dc.identifier.citation Analysis of the silicon solar cells efficiency. Type of doping and level optimization / A.V. Sachenko, V.P. Kostylyov, M.V. Gerasymenko, R.M. Korkishko, M.R. Kulish, M.I. Slipchenko, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 67-74. — Бібліогр.: 14 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other DOI: 10.15407/spqeo19.01.067
dc.identifier.other PACS 73.40.-c, 79.20.Fv, 88.40.H-, 88.40.jj
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121527
dc.description.abstract The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown that, due to asymmetry of recombination parameters inherent to this level, the photovoltaic conversion efficiency is increased in SC with the n-type base and decreased in SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of SC based on a-Si:H–n-Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cell characteristics has been made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters’ values. Apart from the key characteristics of SC, surface recombination rate and series resistance were determined from the results of this comparison, in full agreement with the experimental findings. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Analysis of the silicon solar cells efficiency. Type of doping and level optimization uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA

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