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dc.contributor.author |
Kulish, M.R. |
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dc.contributor.author |
Litvinova, V.M. |
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dc.contributor.author |
Malysh, M.I. |
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dc.contributor.author |
Sokolovskyi, I.O. |
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dc.date.accessioned |
2017-06-14T15:16:22Z |
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dc.date.available |
2017-06-14T15:16:22Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Temperature effect on light polarization in uniaxial crystals / M.R. Kulish, V.M. Litvinova, M.I. Malysh, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 44-46. — Бібліогр.: 6 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
DOI: 10.15407/spqeo19.01.044 |
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dc.identifier.other |
PACS 42.25.ja, 65.40.De, 78.20.-e |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121523 |
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dc.description.abstract |
It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial crystal, and analyzer. These effects introduce systematic errors in the results of researching the nonlinear processes. To minimize this harmful effect, polarization researches must be carried out at a constant sample temperature. For example, research of the nonlinear polarization processes in CdS should be done with a sample temperature uncertainty no higher than ±1 K. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Temperature effect on light polarization in uniaxial crystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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