Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
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dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Mitin, V.F.
dc.contributor.author	Mitin, E.V.
dc.contributor.author	Lytvyn, O.S.
dc.contributor.author	Kapitanchuk, L.M.
dc.date.accessioned	2017-06-14T10:52:32Z
dc.date.available	2017-06-14T10:52:32Z
dc.date.issued	2006
dc.identifier.citation	Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures / N.S. Boltovets, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.F. Mitin, E.V. Mitin, O.S. Lytvyn, L.M. Kapitanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 58-60. — Бібліогр.: 2 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.05.Rm
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121434
dc.description.abstract	We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) and analytical (AES) techniques, we showed that thermal annealings at Т = 300 °С (for 60 s) and 360 °С (for 30 s) do not change the phase composition of the metallization. This ensures thermal stability of the contacts and Hall sensors made on the basis of Au–Ti–n-InSb–GaAs(i) structures.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA