Simulation of strain fields in GaSb/InAs heteroepitaxial system

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
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dc.contributor.author	Shutov, S.V.
dc.contributor.author	Baganov, Ye.A.
dc.date.accessioned	2017-06-14T10:13:39Z
dc.date.available	2017-06-14T10:13:39Z
dc.date.issued	2006
dc.identifier.citation	Simulation of strain fields in GaSb/InAs heteroepitaxial system / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 23-25. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.05.Ea, 83.85.St, 68.35.Ct
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121427
dc.description.abstract	Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network were found using two-dimensional simulation. The radius of the dislocation core, depths of the strain penetration into the substrate and epitaxial layer as well as change of the material bandgaps near the heterointerface were calculated.	uk_UA
dc.description.sponsorship	The authors thank DSc, Professor I.V. Kurylo for his useful discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Simulation of strain fields in GaSb/InAs heteroepitaxial system	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA