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Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂

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dc.contributor.author Chuiko, G.
dc.contributor.author Don, N.
dc.contributor.author Martyniuk, V.
dc.contributor.author Stepanchikov, D.
dc.date.accessioned 2017-06-14T10:12:38Z
dc.date.available 2017-06-14T10:12:38Z
dc.date.issued 2006
dc.identifier.citation Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂ / G. Chuiko, N. Don, V. Martyniuk, D. Stepanchikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 17-22. — Бібліогр.: 5 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 71.20.-b, 71.18.+y
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121426
dc.description.abstract The comparative analysis of the band structure and carrier kinematics for Zn₃As₂ and Cd₃As₂ has been executed. The influence of presence and absence of symmetry center in different crystalline phases of the above materials is explored. The direct and indirect solutions of dispersion equations were used for the analysis. The results of researches are presented in the form of graphic dependences. The splitting of energy bands caused by the symmetry center loss is estimated. Such splitting is maximal along any directions normal to the main crystalline axis. The principle possibility of the carrier separation by spin with the use of found distinction for the modules of their velocities is shown. uk_UA
dc.description.sponsorship Authors wish to thank Dr. Stanislaw Shutov for his helpful participation in the processes of preparation of this paper. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂ uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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