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dc.contributor.author Khomenkova, L.Yu.
dc.contributor.author Markevich, I.V.
dc.date.accessioned 2017-06-13T20:38:06Z
dc.date.available 2017-06-13T20:38:06Z
dc.date.issued 2002
dc.identifier.citation Photo-enchanced defect reactions in CdS:Ag crystals / L.Yu. Khomenkova, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 264-267. — Бібліогр.: 13 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121296
dc.description.abstract Two reversible photo-enhanced defect reactions proceeding under visible light illumination have been found in CdS:Ag crystals. The first process leads to the increase of crystal photosensitivity, which has been shown to be caused by creation of "sensitizing" recombination centres. The second process results in photosensitivity degradation that has been proved to be due to disappearance of shallow donors. The initial state of the crystal restores under heating in dark. Both reactions have been shown to vanish after Ag extraction from the crystal. Metastable clusters including Ag and Cd atoms are supposed to be responsible for these reactions. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Photo-enchanced defect reactions in CdS:Ag crystals uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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