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dc.contributor.author Jivani, A.R.
dc.contributor.author Gajjar, P.N.
dc.contributor.author Jani, A.R.
dc.date.accessioned 2017-06-13T17:28:30Z
dc.date.available 2017-06-13T17:28:30Z
dc.date.issued 2002
dc.identifier.citation Total energy, equation of states and bulk modulus of Si and Ge / A.R. Jivani, P.N. Gajjar, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 243-246. — Бібліогр.: 21 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 71.15H, 71.25T, 64.30, 71.45N
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121240
dc.description.abstract A model potential describing electron-ion interaction is presented for intrinsic semiconductors Si and Ge. The present model potential is single parametric, continuous in r-space and weaker within core and Coulombic outside the core. The parameter of the potential is determined using the equilibrium condition at zero pressure. The total energy, equation of states and bulk modulus of Si and Ge are calculated using higher order perturbation theory based on pseudopotential formalism which includes covalent correction term. Numerical results of total energy and bulk modulus obtained for the Si and Ge are in good agreements with experimental data and found superior than other such theoretical findings. The predicted equation of states of Si and Ge are also excellent. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Total energy, equation of states and bulk modulus of Si and Ge uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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