Image infrared converters based on ferroelectric- semiconductor thin-layer systems

dc.contributor.author	Sosnin, A.
dc.date.accessioned	2017-06-13T16:59:51Z
dc.date.available	2017-06-13T16:59:51Z
dc.date.issued	2000
dc.identifier.citation	Image infrared converters based on ferroelectric- semiconductor thin-layer systems / A. Sosnin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 489-495. — Бібліогр.: 42 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 42.79.P, 85.50
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121223
dc.description.abstract	Some questions concerning pyroelectric sensors application in microphotoelectronics are considered. Data upon main characteristics of different pyroelectric materials (single crystals, ceramics, thin films) are summarized. Also represented are basic parameters of uncooled pyroelectric thermal vision image converters as a promising direction of the infrared engineering.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Image infrared converters based on ferroelectric- semiconductor thin-layer systems	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA