Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation  in static vacuum

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 4
→
Переглянути статтю

dc.contributor.author	Gritsook, B.N.
dc.contributor.author	Fodchoock, I.M.
dc.contributor.author	Nichiy, S.V.
dc.contributor.author	Paranchich, U.S.
dc.contributor.author	Politanskiy, R.L.
dc.date.accessioned	2017-06-13T16:55:27Z
dc.date.available	2017-06-13T16:55:27Z
dc.date.issued	2000
dc.identifier.citation	Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 70.61.J
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121216
dc.description.abstract	Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions close to bulk material by their properties.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA