Structural changes in molten CdTe

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 4
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dc.contributor.author	Shcherbak, L.
dc.contributor.author	Feychuk, P.
dc.contributor.author	Plevachuk, Yu.
dc.contributor.author	Dong, Ch.
dc.contributor.author	Sklyarchuk, V.
dc.date.accessioned	2017-06-13T16:54:12Z
dc.date.available	2017-06-13T16:54:12Z
dc.date.issued	2000
dc.identifier.citation	Structural changes in molten CdTe / L. Shcherbak, P. Feychuk, Yu. Plevachuk, Ch. Dong, V. Sklyarchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 456-459. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.43.D, 64.70.D,66.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121214
dc.description.abstract	Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys near a melting point. According to the η(T) dependencies data drastic changes the melts structure occurred at 1376 K both during the heating and cooling of the melts.	uk_UA
dc.description.sponsorship	The authors are very grateful to Prof. Suck and Prof. O.E. Panchuk for the initiation of this work. The work is supported in part by European Union Grant «Coper-nicus» ERBIC 15 CT 960808.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Structural changes in molten CdTe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA