Наукова електронна бібліотека
періодичних видань НАН України

Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Sachenko, A.V.
dc.contributor.author Kostylyov, V.P.
dc.contributor.author Korkishko, R.M.
dc.contributor.author Kulish, M.R.
dc.contributor.author Sokolovskyi, I.O.
dc.contributor.author Vlasiuk, V.M.
dc.contributor.author Khomenko, D.V.
dc.date.accessioned 2017-06-13T16:53:37Z
dc.date.available 2017-06-13T16:53:37Z
dc.date.issued 2015
dc.identifier.citation Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other DOI: 10.15407/spqeo18.03.259
dc.identifier.other PACS 88.40.hj, 88.40.jj
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121212
dc.description.abstract Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті

Пошук


Розширений пошук

Перегляд

Мій обліковий запис