Ohmic contacts based on Pd to indium phosphide Gunn diodes

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Bobyl, A.V.
dc.contributor.author	Zorenko, A.V.
dc.contributor.author	Arsentiev, I.N.
dc.contributor.author	Kladko, V.P.
dc.contributor.author	Kovtonyuk, V.M.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Sachenko, A.V.
dc.contributor.author	Slipokurov, V.S.
dc.contributor.author	Slepova, A.S.
dc.contributor.author	Safryuk, N.V.
dc.contributor.author	Gudymenko, A.I.
dc.contributor.author	Shynkarenko, V.V.
dc.date.accessioned	2017-06-13T16:51:23Z
dc.date.available	2017-06-13T16:51:23Z
dc.date.issued	2015
dc.identifier.citation	Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.03.317
dc.identifier.other	PACS 73.40.Cg, 73.40.Ns, 85.30.Fg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121208
dc.description.abstract	Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Ohmic contacts based on Pd to indium phosphide Gunn diodes	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA