Simulation of low angle X-ray diffraction on multilayers subjected to diffusion

dc.contributor.author	Fedorov, A.G.
dc.date.accessioned	2017-06-13T16:46:28Z
dc.date.available	2017-06-13T16:46:28Z
dc.date.issued	2000
dc.identifier.citation	Simulation of low angle X-ray diffraction on multilayers subjected to diffusion / A.G. Fedorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 554-557. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.10.N, 68.65
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121196
dc.description.abstract	Calculative method based on the Riccatti type differential equation was tested for simulation of low angle X-ray diffraction patterns from the one-dimensionally ordered multilayer. Some peculiarities of diffraction were revealed connected with asymmetrical distortion of the multilayer profile due to different processes on the layer boundaries.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Simulation of low angle X-ray diffraction on multilayers subjected to diffusion	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA