Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

dc.contributor.author	Konakova, R.V.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Stovpovoi, M.A.
dc.date.accessioned	2017-06-13T16:43:48Z
dc.date.available	2017-06-13T16:43:48Z
dc.date.issued	2002
dc.identifier.citation	Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.40.K, 73.40.C
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121191
dc.description.abstract	The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA