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dc.contributor.author Klad’ko, V.P.
dc.contributor.author Lytvyn, O.S.
dc.contributor.author Lytvyn, P.M.
dc.contributor.author Osipenok, N.M.
dc.contributor.author Pekar, G.S.
dc.contributor.author Prokopenko, I.V.
dc.contributor.author Singaevsky, A.F.
dc.contributor.author Korchevoy, A.A.
dc.date.accessioned 2017-06-13T16:32:44Z
dc.date.available 2017-06-13T16:32:44Z
dc.date.issued 2002
dc.identifier.citation Recrystallization processes in screen-printed CdS films / V.P. Klad’ko, O.S. Lytvyn, P.M. Lytvyn, N.M. Osipenok, G.S. Pekar, I.V. Prokopenko, A.F. Singaevsky, A.A. Korchevoy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 170-175. — Бібліогр.: 19 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 72.20.D, 84.60.J, 61.72.Dd, 61.72.Mm, 68.35.Bs
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121180
dc.description.abstract Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the macrostrain, as well as their dependence on heat treatment regimes is established. It is shown that single-phase CdS films having a thickness of some tens microns, large grain size and low residual strain can be produced at optimum technological regimes. The films obtained are suitable for fabrication of CdS/CdTe solar cells. uk_UA
dc.description.sponsorship Financial support for this work came through USTC project # 1088. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Recrystallization processes in screen-printed CdS films uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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