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dc.contributor.author |
Freik, D.M. |
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dc.contributor.author |
Galushchak, M.O. |
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dc.contributor.author |
Ivanishin, I.M. |
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dc.contributor.author |
Shperun, V.M. |
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dc.contributor.author |
Zapukhlyak, R.I. |
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dc.contributor.author |
Pyts, M.V. |
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dc.date.accessioned |
2017-06-13T16:29:53Z |
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dc.date.available |
2017-06-13T16:29:53Z |
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dc.date.issued |
2000 |
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dc.identifier.citation |
Thermoelectric properties of solid solutions based on tin telluride / D.M. Freik, M.O. Galushchak, I.M. Ivanishin, V.M. Shperun, R.I. Zapukhlyak, M.V. Pyts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 287-290. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 73.61.J, 72.20, 85.30, 07.07.0 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121176 |
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dc.description.abstract |
The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism of the solid solutions formation are proposed. Showed is that at the expense of essential decreasing of a thermal conductivity factor in the solid solutions the improvement of the basic thermoelectric parameters of the material takes place. The compositions which have a maximum values of the thermoelectric Q-factor are retrieved. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Thermoelectric properties of solid solutions based on tin telluride |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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