Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating

dc.contributor.author	Agueev, O.A.
dc.contributor.author	Svetlichnyi, A.M.
dc.date.accessioned	2017-06-13T16:16:10Z
dc.date.available	2017-06-13T16:16:10Z
dc.date.issued	2000
dc.identifier.citation	Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating / O.A. Agueev, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 338-342. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.H, 73.40.Q
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121167
dc.description.abstract	For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize the formation and annealing conditions for structures with film coating disturbances during annealing when manufacturing integrated microcircuits.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA