Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
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dc.contributor.author	Olikh, Y.M.
dc.contributor.author	Savkina, R.K.
dc.contributor.author	Vlasenko, O.I.
dc.date.accessioned	2017-06-13T15:33:15Z
dc.date.available	2017-06-13T15:33:15Z
dc.date.issued	2000
dc.identifier.citation	Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys / Y.M. Olikh, R.K. Savkina, O.I. Vlasenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 304-307. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.V, 42.70.K, 71.28, 61.72.H
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121132
dc.description.abstract	The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.	uk_UA
dc.description.abstract	The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p→n conversion have been detected in p-Hg₁₋xCdxTe at T < 120 K.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA