Technology of manufacturing the reliable silicon photoconverters with long operation time

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3
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dc.contributor.author	Guseynov, N.A.
dc.contributor.author	Askerov, Sh.Q.
dc.contributor.author	Aslanov, Sh.S.
dc.contributor.author	Agaev, M.N.
dc.contributor.author	Gasanov, M.H.
dc.date.accessioned	2017-06-13T11:35:54Z
dc.date.available	2017-06-13T11:35:54Z
dc.date.issued	2005
dc.identifier.citation	Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 84.60.Jt
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120974
dc.description.abstract	We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al₈₀Ni₂₀ confirming amorphism were obtained. The key PC parameters are determined.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Technology of manufacturing the reliable silicon photoconverters with long operation time	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA