Nonlinear-optical processes at streamer discharge in semiconductors

Abstract

The possibility of light auto-channelling (self-trapping) in conditions of streamer discharge in hexagonal and cubic semiconductors was shown. It is considered the mechanism of discharge in the wide-gap compounds on the basis of representation about the light auto-channelling at streamer excitation, providing their high propagation velocity down to ~5∙10⁹ cm/s, the crystallographic orientation (directionality), filamentary character at thickness of the channel about 1 μm and absence of the catastrophic destructions of a crystal.