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dc.contributor.author |
Ostapov, S.E. |
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dc.contributor.author |
Gorbatyuk, I.N. |
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dc.contributor.author |
Zhikharevich, V.V. |
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dc.date.accessioned |
2017-06-12T15:15:03Z |
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dc.date.available |
2017-06-12T15:15:03Z |
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dc.date.issued |
2005 |
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dc.identifier.citation |
Investigation of the physical properties of multi-component solid solutions Hg₁₋x₋y₋zAxByCzTe / S.E. Ostapov, I.N. Gorbatyuk, V.V. Zhikharevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 30-35. — Бібліогр.: 12 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 72.20.Dp; 72.20.Fr; 72.20.My |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120649 |
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dc.description.abstract |
This paper presents theoretical research on the basic band parameters and galvanomagnetic phenomena in multicomponent solid solutions Hg₁₋x₋yAxByCzTe, Hg₁₋x₋zCdxZnzTe and Hg₁₋x₋y₋zAxByCzTe, resulting in the empirical formulae for the energy gap and the intrinsic carrier concentration of these materials in a wide range of temperatures and compositions. The effective mechanisms of charge carrier scattering, concentration and activation energy of acceptor impurities have been determined. The results of theoretical research are in a good agreement with the experimental and literature data. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Investigation of the physical properties of multi-component solid solutions Hg₁₋x₋y₋zAxByCzTe |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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