The nature of red emission in porous silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 1
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dc.contributor.author	Khomenkova, L.Yu.
dc.contributor.author	Korsunska, N.E.
dc.contributor.author	Bulakh, B.M.
dc.contributor.author	Sheinkman, M.K.
dc.contributor.author	Stara, T.R.
dc.date.accessioned	2017-06-12T14:40:11Z
dc.date.available	2017-06-12T14:40:11Z
dc.date.issued	2005
dc.identifier.citation	The nature of red emission in porous silicon / L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K. Sheinkman, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 60-63. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 78.67.-n, 78.30-j, 78.55.-m.
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120640
dc.description.abstract	The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission band and is present in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. The second one that causes red emission band appears during aging is supposed to be connected with carrier recombination through oxide-related defects. It is shown that this channel dominates in aged samples.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The nature of red emission in porous silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA