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dc.contributor.author |
Druzhinin, A.A. |
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dc.contributor.author |
Maryamova, I.I. |
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dc.contributor.author |
Kutrakov, O.P. |
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dc.date.accessioned |
2017-06-12T12:21:45Z |
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dc.date.available |
2017-06-12T12:21:45Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
GaSb whiskers in sensor electronics / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov // Functional Materials. — 2016. — Т. 23, № 2. — С. 206-211. — Бібліогр.: 16 назв. — англ. |
uk_UA |
dc.identifier.issn |
1027-5495 |
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dc.identifier.other |
DOI: dx.doi.org/10.15407/fm23.02.206 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120612 |
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dc.description.abstract |
Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive mechanical sensors based on these microcrystals was shown. On the basis of n- and p-type GaSb whiskers the strain gauges were created with high sensitivity operating in the wide temperature range. Sensors of hydrostatic pressure up to 5000 bar based on the n-type GaSb whiskers with high sensitivity were developed, that allows to obtain the output signal to 700 mV (without amplification) at this pressure. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
НТК «Інститут монокристалів» НАН України |
uk_UA |
dc.relation.ispartof |
Functional Materials |
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dc.subject |
Characterization and properties |
uk_UA |
dc.title |
GaSb whiskers in sensor electronics |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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