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dc.contributor.author Druzhinin, A.A.
dc.contributor.author Maryamova, I.I.
dc.contributor.author Kutrakov, O.P.
dc.date.accessioned 2017-06-12T12:21:45Z
dc.date.available 2017-06-12T12:21:45Z
dc.date.issued 2016
dc.identifier.citation GaSb whiskers in sensor electronics / A.A. Druzhinin, I.I. Maryamova, O.P. Kutrakov // Functional Materials. — 2016. — Т. 23, № 2. — С. 206-211. — Бібліогр.: 16 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.other DOI: dx.doi.org/10.15407/fm23.02.206
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/120612
dc.description.abstract Piezoresistive properties of gallium antimonide whiskers grown from the vapour phase by chemical transport reaction were studied in the temperature range of -150÷+100°C. The possibility to create different piezoresistive mechanical sensors based on these microcrystals was shown. On the basis of n- and p-type GaSb whiskers the strain gauges were created with high sensitivity operating in the wide temperature range. Sensors of hydrostatic pressure up to 5000 bar based on the n-type GaSb whiskers with high sensitivity were developed, that allows to obtain the output signal to 700 mV (without amplification) at this pressure. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Characterization and properties uk_UA
dc.title GaSb whiskers in sensor electronics uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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