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dc.contributor.author |
Opanasyuk, A.S. |
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dc.contributor.author |
Koval, P.V. |
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dc.contributor.author |
Nam, D. |
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dc.contributor.author |
Cheong, H. |
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dc.contributor.author |
Jeong, A.R. |
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dc.contributor.author |
Jo, W. |
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dc.contributor.author |
Ponomarev, A.G. |
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dc.date.accessioned |
2017-06-12T07:29:26Z |
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dc.date.available |
2017-06-12T07:29:26Z |
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dc.date.issued |
2014 |
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dc.identifier.citation |
The structure, phase and chemical composition of CZTSe thin films / A.S. Opanasyuk, P.V. Koval, D. Nam, H. Cheong, A.R. Jeong, W. Jo, A.G. Ponomarev // Functional Materials. — 2014. — Т. 21, № 2. — С. 164-170. — Бібліогр.: 26 назв. — англ. |
uk_UA |
dc.identifier.issn |
1027-5495 |
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dc.identifier.other |
DOI: dx.doi.org/10.15407/fm21.02.164 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120411 |
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dc.description.abstract |
Cu₂ZnSnSe₄ thin films obtained by co-evaporation of components using an electron beam evaporation system were investigated by scanning electron microscopy, X-ray analysis, PIXI and RBS methods. The analysis of the diffraction patterns showed that the films are almost single-phased and contain mainly CZTSe compound, which has a tetragonal kesterite lattice type. The samples have textural growth of [211]. The lattice parameters of the material varied in the range of a = (0.56640-0.56867) nm, c = (1.13466-1.13776) nm, c/2a = 0.9983-1.0017 which correlate well with the reference data in a stable phase CZTSe compounds. From our PIXE analyses we assessed the influence of the growth conditions on the samples chemical composition and mapped the surface distribution. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
НТК «Інститут монокристалів» НАН України |
uk_UA |
dc.relation.ispartof |
Functional Materials |
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dc.subject |
Characterization and properties |
uk_UA |
dc.title |
The structure, phase and chemical composition of CZTSe thin films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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