Photoluminescence characterization of AlN nanowhiskers

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2014, том 21
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Functional Materials, 2014, № 1
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dc.contributor.author	Vokhmintsev, A.S.
dc.contributor.author	Weinstein, I.A.
dc.contributor.author	Chaikin, D.V.
dc.contributor.author	Spiridonov, D.M.
dc.contributor.author	Afonin, Yu.D.
dc.date.accessioned	2017-06-12T06:38:25Z
dc.date.available	2017-06-12T06:38:25Z
dc.date.issued	2014
dc.identifier.citation	Photoluminescence characterization of AlN nanowhiskers / A.S. Vokhmintsev, I.A. Weinstein, D.V. Chaikin, D.M. Spiridonov, Yu.D. Afonin // Functional Materials. — 2014. — Т. 21, № 1. — С. 21-25. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: dx.doi.org/10.15407/fm21.01.021
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120379
dc.description.abstract	Photoluminescence (PL) properties of synthesized Al-rich nanowhiskers with diameter 60±20 nm and bulk AlN single crystals were compared at the room temperature. It was found that PL spectra for AlN nanowhiskers were characterized by three components of the Gaussian shape with maximum energy 3.16, 2.90, and 2.55 eV and halfwidth 0.7, 0.4, and 0.7 eV, respectively. It was shown that the same bands - 3.2 and 2.6 eV - were observed in luminescence of the bulk and nanostructured samples. The registered emissions were attributed to electron-optical transitions between donor levels of the ON-, VN-centers and acceptor states of the CN-centers and (ON-VAl)-complexes.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Photoluminescence characterization of AlN nanowhiskers	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA