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dc.contributor.author |
Vovk, R.V. |
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dc.contributor.author |
Vovk, N.R. |
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dc.contributor.author |
Samoilov, A.V. |
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dc.date.accessioned |
2017-06-11T06:47:32Z |
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dc.date.available |
2017-06-11T06:47:32Z |
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dc.date.issued |
2013 |
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dc.identifier.citation |
Effect of praseodymium doping on electroresistivity along c-axis in Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals / R.V. Vovk, N.R. Vovk, A.V. Samoilov // Functional Materials. — 2013. — Т. 20, № 4. — С. 457-461. — Бібліогр.: 25 назв. — англ. |
uk_UA |
dc.identifier.issn |
1027-5495 |
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dc.identifier.other |
DOI: dx.doi.org/10.15407/fm20.04.457 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120111 |
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dc.description.abstract |
In the present study influence of praseodymium doping on conductivity across (transverse) the basal plane of high-temperature superconducting Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals is investigated. It is determined that increase of praseodymium doping leads to increased localization effects and implementation of the metal – insulator transition Y₁₋xPrxBa₂Cu₃O₇₋δ, which always precedes the superconducting transition. The praseodymium concentration increase also leads to significant displacement of the point of the metal – insulator transition to the low temperature region. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
НТК «Інститут монокристалів» НАН України |
uk_UA |
dc.relation.ispartof |
Functional Materials |
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dc.subject |
Characterization and properties |
uk_UA |
dc.title |
Effect of praseodymium doping on electroresistivity along c-axis in Y₁₋xPrxBa₂Cu₃O₇₋δ single crystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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