Photovoltaic effect in p–SiC/p–Si heterojunction

dc.contributor.author	Kozlovskyi, A.A.
dc.contributor.author	Semenov, A.V.
dc.contributor.author	Puzikov, V.M.
dc.date.accessioned	2017-06-11T05:26:35Z
dc.date.available	2017-06-11T05:26:35Z
dc.date.issued	2013
dc.identifier.citation	Photovoltaic effect in p–SiC/p–Si heterojunction / A.A. Kozlovskyi, A.V. Semenov, V.M. Puzikov // Functional Materials. — 2013. — Т. 20, № 2. — С. 217-220. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: dx.doi.org/10.15407/fm20.02.217
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120066
dc.description.abstract	The photovoltaic effect of isotype heterojunction with hole conductivity formed films of nanocrystallinep–21R–SiC, deposited on single-crystal substrate of p–Si, has been studied (heterojunction p–SiC/p–Si). The films were prepared by direct ion deposition. The features of the current-voltage and the photovoltaic characteristics of the heterostructure p–SiC/p–Si were explained by the effect of the potential barriers, caused by band offsets in the contact region, on the migration of charge carriers through the heterojunction.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Photovoltaic effect in p–SiC/p–Si heterojunction	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA