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dc.contributor.author |
Kanishchev, V.N. |
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dc.date.accessioned |
2017-06-10T11:08:09Z |
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dc.date.available |
2017-06-10T11:08:09Z |
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dc.date.issued |
2013 |
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dc.identifier.citation |
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.issn |
1027-5495 |
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dc.identifier.other |
DOI: dx.doi.org/10.15407/fm20.01.123 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119910 |
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dc.description.abstract |
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
НТК «Інститут монокристалів» НАН України |
uk_UA |
dc.relation.ispartof |
Functional Materials |
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dc.subject |
Technology |
uk_UA |
dc.title |
The increase of crystal growing rate without damaging the smoothness of interface border |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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