Review of a monographs

dc.contributor.author	Glinchuk, K.D.
dc.date.accessioned	2017-06-10T08:10:45Z
dc.date.available	2017-06-10T08:10:45Z
dc.date.issued	1999
dc.identifier.citation	Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119878
dc.description.abstract	In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.subject	Review of a monographs	uk_UA
dc.title	Review of a monographs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA