Efficiency limit for diffusion silicon solar cells at concentrated illumination

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2
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dc.contributor.author	Gorban, A.P.
dc.contributor.author	Kostylyov, V.P.
dc.contributor.author	Sachenko, A.V.
dc.contributor.author	Serba, A.A.
dc.date.accessioned	2017-06-10T07:44:12Z
dc.date.available	2017-06-10T07:44:12Z
dc.date.issued	1999
dc.identifier.citation	Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 84.60.J, 72.20.J
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119858
dc.description.abstract	A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Efficiency limit for diffusion silicon solar cells at concentrated illumination	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA