Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2015, том 22
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Functional Materials, 2015, № 4
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dc.contributor.author	Galenin, E.
dc.contributor.author	Biatov, M.
dc.contributor.author	Gerasymov, I.
dc.contributor.author	Grinyov, B.
dc.contributor.author	Sidletskiy, O.
dc.contributor.author	Baranov, V.
dc.contributor.author	Budagov, J.
dc.contributor.author	Davydov, Yu.
dc.contributor.author	Glagolev, V.
dc.date.accessioned	2017-06-07T18:10:58Z
dc.date.available	2017-06-07T18:10:58Z
dc.date.issued	2015
dc.identifier.citation	Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: dx.doi.org/10.15407/fm22.04.423
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119614
dc.description.abstract	A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si⁴⁺/Ge⁴⁺ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA