Hereditary functional individuality of semiconductor sensors

dc.contributor.author	Migal, V.P.
dc.contributor.author	But, A.V.
dc.contributor.author	Migal, G.V.
dc.contributor.author	Klymenko, I.A.
dc.date.accessioned	2017-06-07T11:50:05Z
dc.date.available	2017-06-07T11:50:05Z
dc.date.issued	2015
dc.identifier.citation	Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: http://dx.doi.org/10.15407/fm22.03.387
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119556
dc.description.abstract	By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Devices and instruments	uk_UA
dc.title	Hereditary functional individuality of semiconductor sensors	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA