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Optical approach to analysis of interaction of gallium nitride and weak magnetic fields

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dc.contributor.author Red'ko, R.A.
dc.date.accessioned 2017-06-06T14:32:44Z
dc.date.available 2017-06-06T14:32:44Z
dc.date.issued 2015
dc.identifier.citation Optical approach to analysis of interaction of gallium nitride and weak magnetic fields / R.A. Red'ko // Functional Materials. — 2015. — Т. 22, № 2. — С. 188-192. — Бібліогр.: 11 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.other DOI: http://dx.doi.org/10.15407/fm22.02.188
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119350
dc.description.abstract The long-term transformations of optical transmittance of GaN epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 10 min) were obtained. Optical measurements were performed in the waverange of 320-1100 nm at 300 K. The method with three layers simulation was proposed for transmittance spectrum fitting. It was found that the treatment results in not only the optical film thickness changing, but probably in its refractive index too. Non-monotonous changes of the optical thickness, which formed interference, were obtained. Interpretation of the experimental results is based on diffusion of point defects after destruction of the metastable complexes from inner boundaries to surfaces of the studied structures. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Characterization and properties uk_UA
dc.title Optical approach to analysis of interaction of gallium nitride and weak magnetic fields uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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