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The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

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dc.contributor.author Agueev, O.A.
dc.contributor.author Svetlichny, A.M.
dc.date.accessioned 2017-06-06T13:18:24Z
dc.date.available 2017-06-06T13:18:24Z
dc.date.issued 2001
dc.identifier.citation The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating / O.A. Agueev, A.M. Svetlichny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 307-312. — Бібліогр.: 15 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 61.72 H, 73.40 Q
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119334
dc.description.abstract In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order, and the increase in heating temperature from 800 to 1100 °C increases the defect formation criterion by two orders. The optimum size and shape alteration range as well as the heating temperature for defect-free thermal treatment of structures are determined. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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