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dc.contributor.author |
Anokhov, S. |
|
dc.contributor.author |
Khizhnyak, A. |
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dc.contributor.author |
Lymarenko, R. |
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dc.date.accessioned |
2017-06-06T11:05:24Z |
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dc.date.available |
2017-06-06T11:05:24Z |
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dc.date.issued |
2001 |
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dc.identifier.citation |
New method of apertured electromagnetic field modeling / S. Anokhov, A. Khizhnyak, R. Lymarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 383-388. — Бібліогр.: 10 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 42.15.Dp; 42.25.Fx |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119313 |
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dc.description.abstract |
Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and rectangular aperture. The result of aperture diffraction was represented as a sum of elementary rectangular unit cell waves. New integral approach to modeling of plane wave diffraction on an arbitrary two-dimensional aperture is discussed. Proposed method is very useful for providing numerical modeling of diffraction phenomena. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
New method of apertured electromagnetic field modeling |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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