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dc.contributor.author Gorley, P.М.
dc.contributor.author Prokopenko, I.V.
dc.contributor.author Galochkinа, О.О.
dc.contributor.author Horley, P.P.
dc.contributor.author Vorobiev, Yu.V.
dc.contributor.author González-Hernández, J.
dc.date.accessioned 2017-05-31T19:58:09Z
dc.date.available 2017-05-31T19:58:09Z
dc.date.issued 2009
dc.identifier.citation Parameters of the energy spectrum for holes in CuInSe₂ / P.М. Gorley, I.V. Prokopenko, О.О. Galochkinа, P.P. Horley, Yu.V. Vorobiev, J. Gonzalez-Hernandez // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 302-308. — Бібліогр.: 30 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 61.50.Ah 71.20.-b, 73.50.Lw
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118881
dc.description.abstract This paper reports the coefficients Ca,b for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We also obtained the tensor components for the carrier effective masses, in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe₂ allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K. uk_UA
dc.description.sponsorship The paper was partially supported by the budget financing of the Ministry for Education and Science of Ukraine and research projects (2009-2011 years) at the Department of Electronics and Energy Engineering and Scientific and Educational Center “Material Science of Semiconductors and Energy-Efficient Technologies” at the Chernivtsi National University. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Parameters of the energy spectrum for holes in CuInSe₂ uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA

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