Electron mobility in CdxHg₁₋xSe

dc.contributor.author	Malyk, O.P.
dc.date.accessioned	2017-05-31T19:46:56Z
dc.date.available	2017-05-31T19:46:56Z
dc.date.issued	2009
dc.identifier.citation	Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.10.-d, 72.10.Fk, 72.15.-v
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118873
dc.description.abstract	Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electron mobility in CdxHg₁₋xSe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA