Stacking Faults in the single crystals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
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dc.contributor.author	Mihir M. Vora
dc.contributor.author	Aditya M. Vora
dc.date.accessioned	2017-05-31T19:14:24Z
dc.date.available	2017-05-31T19:14:24Z
dc.date.issued	2009
dc.identifier.citation	Stacking Faults in the single crystals / Mihir M. Vora, Aditya M. Vora // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 421-423. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.10.-i, 61.72.-y, 61.72.Dd, Nn
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118848
dc.description.abstract	The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural characterization of these crystals was made using the XRD method. The particle size for a number of reflections has been calculated using the Scherrer formula. There are considerable variations appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the stacking fault in the single crystal.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Stacking Faults in the single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA