Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-31T18:51:07Z
dc.date.available	2017-05-31T18:51:07Z
dc.date.issued	2009
dc.identifier.citation	Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 349-356. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72, 72.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118834
dc.description.abstract	Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently changes both effects. Calculated here values substantially differ from consequent those obtained on the base of popular - approximation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA