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dc.contributor.author |
Borblik, V.L. |
|
dc.contributor.author |
Shwarts, Yu.M. |
|
dc.contributor.author |
Shwarts, M.M. |
|
dc.date.accessioned |
2017-05-31T18:47:28Z |
|
dc.date.available |
2017-05-31T18:47:28Z |
|
dc.date.issued |
2009 |
|
dc.identifier.citation |
A new method of extraction of a p-n diode series resistance
from I-V characteristics and its application to analysis
of low-temperature conduction of the diode base / V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 339-342. — Бібліогр.: 14 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 71.30.+h, 72.20.Ee, 85.30.Kk |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118832 |
|
dc.description.abstract |
A new analytical method of extraction of a diode series resistance from
current-voltage characteristics is proposed which takes into account dependence of the
series resistance on voltage (or current). The method supposes a presence of linear
section in the diode current-voltage characteristic plotted in semi-logarithmic scale. This
method is applied here to experimental data for silicon diode in which series resistance is
caused by freezing-out free current carriers into impurities at cryogenic temperatures.
Character of dependence of the base resistance on electric field in the base layer
determined in such way confirms hopping nature of silicon conduction under these
conditions. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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